Table 1.
Voltage-dependent gating parameters of β3-WT and β3-V36M
Peak INa | Activation | Inactivation | Recovery | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|
Samples | pA/pF | n | V1/2(mV) | K | n | V1/2 (mV) | n | τf (ms) | τs (ms) | As (%) | n |
SCN5A + Vector | −230 ± 49 | 13 | −36 ± 2 | 4.7 | 7 | −75 ± 1 | 8 | 1.5 ± 0.3 | 54 ± 9 | 25 ± 2 | 8 |
SCN5A + β3-WT | −245 ± 43 | 26 | −39 ± 1 | 4.7 | 20 | −79 ± 1# | 21 | 1.4 ± 0.2 | 44 ± 7 | 24 ± 2 | 14 |
SCN5A + β3-V36M | −102±24*# | 13 | −36 ± 2 | 5.0 | 11 | −80 ± 1# | 11 | 1.5 ± 0.2 | 43 ± 9 | 28 ± 1 | 9 |
The fitted values of voltage-dependent gating parameters represent the mean ± SEM for number of cells n in the table. These parameters were obtained from fitting the individual experiments as in Figure 2C&D to the appropriate model equations.
For the Boltzmann fits the parameters of V1/2 are the midpoint of activation and inactivation.
P< 0.05 vs SCN5A + Vector.
P< 0.05 vs β3-WT.